Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
- Author
- KÜNECKE, U1 ; WELLMANN, P. J1
[1] Institute for Materials Science 6, University of Erlangen, Martensstr. 7, 91058 Erlangen, Germany - Source
EPJ. Applied physics (Print). 2006, Vol 34, Num 3, pp 209-213, 5 p ; ref : 17 ref
- Publisher
- EDP Sciences, Les Ulis
/
Springer, Berlin
- Publication country
- France
- Document type
- Article
- Language
- English
- Keyword (fr)
- Densité dislocation Dislocation Dispositif expérimental Défaut cristallin Etude expérimentale Gallium arséniure Matériau dopé Propriété optique Semiconducteur III-V Semiconducteur type n As Ga GaAs
- Keyword (en)
- Dislocation density Dislocations Experimental device Crystal defects Experimental study Gallium arsenides Doped materials Optical properties III-V semiconductors n type semiconductor
- Keyword (es)
- Dispositivo experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55E Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40F Semiconductors
- Pacs
- 7840F Semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17901987
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1051/epjap:2006055 
https://dx.doi.org/10.1051/epjap:2006055
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