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Study of transport properties of Ge50-xSbyTe100+x-y thin film alloy

Autor
BAHGAT, A. A1 ; MAHMOUD, E. A2 ; ABD RABO, A. S2 ; MAHDY, I. A2
[1] Department of Physics, Faculty of Science(Boys), Al-Azhar University, Nasr City 11884, Cairo, Egypt
[2] Department of Physics, Faculty of Science(Girls), Al-Azhar University, Nasr City 11884, Cairo, Egypt
Fuente

Journal of materials science. 2006, Vol 41, Num 11, pp 3451-3458, 8 p ; ref : 18 ref

CODEN
JMTSAS
ISSN
0022-2461
Campo Científico
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics; Polymers, paint and wood industries
Editor
Springer, Heidelberg
País de la publicación
Germany
Tipo de documento
Article
Idioma
English
Palabra clave (fr)
Chalcogénure Composition chimique Composé minéral Conductivité électrique Couche mince Dépendance température Etude expérimentale Germanium Telluroantimoniure Propriété électrique Solution solide Ge Sb Te Ge50-xSbyTe100+x-y
Palabra clave (in)
Chalcogenides Chemical composition Inorganic compounds Electrical conductivity Thin films Temperature dependence Experimental study Germanium Antimonides tellurides Electrical properties Solid solutions
Palabra clave (es)
Antimoniuro telururo
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors

Pacs
7361L Other inorganic semiconductors

Disciplina
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
17929597

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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