Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates
- Author
- STEINMAN, E. A1 ; VDOVIN, V. I2 ; YUGOVA, T. G3 ; AVRUTIN, V. S4 ; IZYUMSKAYA, N. F4
[1] Institute of Solid State Physics, Chernogolovka, Moscow district, 142432, Russian Federation
[2] Institute for Chemical Problems of Microelectronics, Moscow, Russian Federation
[3] Institute of Rare Metals, Moscow, Russian Federation
[4] Institute of Microelectronics Technology, Chernogolovka, Moscow district, 142432, Russian Federation - Source
Semiconductor science and technology. 1999, Vol 14, Num 6, pp 582-588 ; ref : 25 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Dislocation Etat défaut Etude expérimentale Germanium alliage Hétérostructure Matériau semiconducteur Photoluminescence Silicium alliage Ge Si Si1-xGex
- Keyword (en)
- Dislocations Defect states Experimental study Germanium alloys Heterostructures Semiconductor materials Photoluminescence Silicon alloys
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55A Elemental semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66D Elemental semiconductors and insulators
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1794840
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/14/6/316 
https://dx.doi.org/10.1088/0268-1242/14/6/316
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