Shallow junctions on pillar sidewalls for sub-100-nm vertical MOSFETs
- Author
- GILI, Enrico1 ; UCHINO, Takashi1 ; AL HAKIM, Mohammad M1 ; DE GROOT, C. H1 ; BUIU, Octavian2 ; HALL, Steve2 ; ASHBURN, Peter1
[1] School of Electronics and Computer Science, University of Southampton, SO17 1BJ Southampton, United Kingdom
[2] School of Electrical Engineering and Electronics, University of Liverpool, L69 3BX Liverpool, United Kingdom - Source
IEEE electron device letters. 2006, Vol 27, Num 8, pp 692-695, 4 p ; ref : 17 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Diffusion drain-induced barrier lowering (DIBL) junction vertical MOSFET
- Keyword (fr)
- Cale espacement Fabrication microélectronique Hauteur barrière Jonction peu profonde Lithographie Polycristal Procédé fabrication Technologie MOS complémentaire Technologie planaire Transistor MOSFET Transistor vertical
- Keyword (en)
- Spacer Microelectronic fabrication Barrier height Shallow junction Lithography Polycrystal Manufacturing process Complementary MOS technology Planar technology MOSFET Vertical transistor
- Keyword (es)
- Calce espaciamiento Fabricación microeléctrica Altura barrera Unión poco profunda Litografía Policristal Procedimiento fabricación Tecnología MOS complementario Tecnología planar Transistor vertical
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17998028
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2006.879031 
https://dx.doi.org/10.1109/LED.2006.879031
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