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Influence of the electric characteristics of II-VI semiconductor material on the electroluminescence of lanthanide complex

Author
ZHANG, F.-J1 ; XU, Z1 ; LV, Y.-G2 3 ; ZHANG, J.-C2 ; ZHAO, S. L1 ; HUANG, J.-Z1 ; WANG, Y1 ; YUAN, G.-C1 ; ZHAO, D.-W1 ; XU, X.-R1
[1] Institute of Optoelectronic Technology, Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Beijing 100044, China
[2] Institute of Modern Catalysis, State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
[3] Chemistry-Pharmacy College of Jiamusi University, Jiamusi 154007, China
Source

The European physical journal. B, Condensed matter physics. 2006, Vol 52, Num 2, pp 245-248, 4 p ; ref : 21 ref

ISSN
1434-6028
Scientific domain
Condensed state physics; Theoretical physics
Publisher
EDP sciences, Les Ulis / Springer, Berlin
Publication country
France
Document type
Article
Language
English
Keyword (fr)
Effet champ électrique Electroluminescence Electron chaud Exciton Injection porteur charge Lanthanide complexe Optimisation Semiconducteur II-VI Transfert énergie 7860F
Keyword (en)
Electric field effects Electroluminescence Hot electrons Excitons Charge carrier injection Rare earth complexes Optimization II-VI semiconductors Energy transfer
Keyword (es)
Inyección portador carga
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H60 Other luminescence and radiative recombination / 001B70H60F Electroluminescence

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18005601

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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