Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
- Author
- ALGHORAIBI, I1 ; ROHEL, T1 ; BERTRU, N1 ; LE CORRE, A1 ; LETOUBLON, A1 ; CAROFF, P1 ; DEHAESE, O1 ; LOUALICHE, S1
[1] UMR C6082 FOTON INSA- Rennes, 20 avenue des buttes de Coesmes, 35043 Rennes, France - Source
Journal of crystal growth. 2006, Vol 293, Num 2, pp 263-268, 6 p ; ref : 18 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 81.05.Ea 81.07.Ta 81.15.Hi A1. Atomic force microscopy A3. Molecular beam epitaxy Al. Nanostructures B2. Semiconducting aluminum compounds B2. Semiconducting indium compounds B2. Semiconducting indium phosphide
- Keyword (fr)
- Amas Autoassemblage Composé binaire Couche tampon Densité Distribution contrainte Effet pression Energie surface Etude expérimentale Indium arséniure Microscopie force atomique Multicouche Nanomatériau Point quantique Semiconducteur III-V As In InAs Méthode Stransky-Krastanow Substrat InP Composé minéral
- Keyword (en)
- Cluster Self-assembly Binary compounds Buffer layer Density Stress distribution Pressure effects Surface energy Experimental study Indium arsenides Atomic force microscopy Multilayers Nanostructured materials Quantum dots III-V semiconductors Stransky-Krastanow method Inorganic compounds
- Keyword (es)
- Montón Capa tampón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18013491
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2006.05.046 
https://dx.doi.org/10.1016/j.jcrysgro.2006.05.046
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