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Effects of substrate temperature on electrical and structural properties of copper thin films

Author
CHAN, Kah-Yoong1 ; TOU, Teck-Yong1 ; TEO, Bee-San1
[1] Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor, Malaysia
Source

Microelectronics journal. 2006, Vol 37, Num 9, pp 930-937, 8 p ; ref : 32 ref

ISSN
0959-8324
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Copper Electrical properties Sputtering Substrate temperature Surface morphology
Keyword (fr)
Caractéristique électrique Couche mince Croissance film Croissance grain Effet température Grosseur grain Magnétron Microscopie force atomique Microstructure Pression atmosphérique Rugosité Semiconducteur type p Sonde 4 pointes Structure surface Température ambiante Tube hyperfréquence Valeur efficace
Keyword (en)
Electrical characteristic Thin film Film growth Grain growth Temperature effect Grain size Magnetron Atomic force microscopy Microstructure Atmospheric pressure Roughness p type semiconductor Four point probe Surface structure Room temperature Microwave tube Root mean square value
Keyword (es)
Característica eléctrica Capa fina Crecimiento grano Efecto temperatura Grosor grano Magnetrón Microscopía fuerza atómica Microestructura Presión atmosférica Rugosidad Semiconductor tipo p Sonda 4 puntas Estructura superficie Temperatura ambiente Tubo hiperfrecuencia Valor eficaz
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03E Electronic tubes, masers

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18014271

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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