Realization of a linear germanium nanowire p-n Junction
- Author
- TUTUC, Emanuel1 ; APPENZELLER, Joerg1 ; REUTER, Mark C1 ; GUHA, Supratik1
[1] I.B.M. TJ Watson Research Center, Yorktown Heights, New York 10598, United States - Source
Nano letters (Print). 2006, Vol 6, Num 9, pp 2070-2074, 5 p ; ref : 20 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition bore Addition phosphore Caractéristique courant tension Croissance cristalline en phase vapeur Dopage modulé Dépôt chimique phase vapeur Fil métallique Germanium Jonction p n Microscopie électronique balayage Nanofil 8107V Ge Substrat Si Composé minéral
- Keyword (en)
- Boron additions Phosphorus additions IV characteristic Crystal growth from vapors Modulation doping CVD Wire Germanium p n junctions Scanning electron microscopy Nanowires Inorganic compounds
- Keyword (es)
- Doping modulado Hilo metálico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18121006
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl061338f 
https://dx.doi.org/10.1021/nl061338f
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