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Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

Author
SAMANTA, Piyas1 ; TSZ YIN MAN1 ; CHAN, Alain Chun Keung1 ; QINGCHUN ZHANG2 ; CHUNXIANG ZHU2 ; MANSUN CHAN1
[1] Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong-Kong
[2] Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
Source

Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1393-1401, 9 p ; ref : 24 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Analyse contrainte Condensateur MOS Contrainte électrique Couche ultramince Courant fuite Effet contrainte Effet tunnel Evaluation performance Grille transistor Génération porteur charge Oxyde grille Piégeage porteur charge Régime permanent
Keyword (en)
Stress analysis MOS capacitor Electric stress Ultrathin films Leakage current Stress effects Tunnel effect Performance evaluation Transistor gate Charge carrier generation Gate oxide Charge carrier trapping Steady state
Keyword (es)
Análisis tensión Capacidad MOS Tensión eléctrica Corriente escape Efecto túnel Evaluación prestación Rejilla transistor Generación portador carga Oxido rejilla Captura portador carga Régimen permanente
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18172418

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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