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Distortion of atoms around the neutral vacancy in a Si crystal

Author
BIERNACKI, S. W1 2 ; BECKER, P1
[1] Physikalisch-Technische Bundesanstalt, P.O. Box 3345, 38023 Braunschwei, Germany
[2] Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
Source

The European physical journal. B, Condensed matter physics. 1999, Vol 8, Num 4, pp 575-582 ; ref : 21 ref

ISSN
1434-6028
Scientific domain
Condensed state physics; Theoretical physics
Publisher
EDP sciences, Les Ulis / Springer, Berlin
Publication country
France
Document type
Article
Language
English
Keyword (fr)
Agrégat atomique Approximation liaison forte Défaut cristallin Déplacement atomique Elément matriciel Etat défaut Etude théorique Interaction coulombienne Interaction électron réseau Lacune Paramètre cristallin Relaxation Silicium Structure électronique Valence Si
Keyword (en)
Atomic clusters Tight binding approximation Crystal defects Atomic displacements Matrix elements Defect states Theoretical study Coulomb interaction Electron lattice interaction Vacancies Lattice parameters Relaxation Silicon Electronic structure Valence
Keyword (es)
Interacción coulombiana Interacción electrón red
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors

Pacs
7155C Elemental semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1818767

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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