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Self-consistent electronic structure of quantum wells by invariant embedding method

Author
GUO, Q1 ; FENG, Y. P1 ; POON, H. C1 ; ONG, C. K1
[1] Department of Physics, National University of Singapore, Singapore 119260, Singapore
Source

The European physical journal. B, Condensed matter physics. 1999, Vol 9, Num 1, pp 29-36 ; ref : 21 ref

ISSN
1434-6028
Scientific domain
Condensed state physics; Theoretical physics
Publisher
EDP sciences, Les Ulis / Springer, Berlin
Publication country
France
Document type
Article
Language
English
Keyword (fr)
Aluminium arséniure Autocohérence Composé binaire Composé ternaire Condition aux limites Densité état électron Etude théorique Gallium arséniure Niveau Fermi Puits quantique Structure bande Al As Ga As Ga Ga1-xAlxAs GaAs Composé minéral
Keyword (en)
Aluminium arsenides Self consistency Binary compounds Ternary compounds Boundary conditions Electronic density of states Theoretical study Gallium arsenides Fermi level Quantum wells Band structure Inorganic compounds
Keyword (es)
Autocoherencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems

Pacs
7321 Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1819420

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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