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Reactive ion etching of dielectrics and silicon for photovoltaic applications

Author
DEENAPANRAY, Prakash N. K1 ; ATHUKORALA, C. S2 ; MACDONALD, Daniel2 ; JELLETT, W. E1 ; FRANKLIN, E1 ; EVERETT, V. E1 ; WEBER, K. J1 ; BLAKERS, A. W1
[1] Centre for Sustainable Energy Systems, FEIT, The Australian National University, Canberra ACT 0200, Australia
[2] Department of Engineering, FEIT, The Australian National University, Canberra ACT 0200, Australia
Source

Progress in photovoltaics. 2006, Vol 14, Num 7, pp 603-614, 12 p ; ref : 35 ref

ISSN
1062-7995
Scientific domain
Energy
Publisher
Wiley, London
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
defects dielectrics reactive ion etching silicon
Keyword (fr)
Cellule solaire silicium DLTS Dopage Durée vie porteur charge Erreur systématique Gravure ionique réactive Gravure plasma Plasma Propriété électronique Régime permanent Système photovoltaïque
Keyword (en)
Silicon solar cells DLTS Doping Carrier lifetime Bias Reactive ion etching Plasma etching Plasma Electronic properties Steady state Photovoltaic system
Keyword (es)
Doping Error sistemático Grabado iónico reactivo Grabado plasma Plasma Propiedad electrónica Régimen permanente Sistema fotovoltaico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18204621

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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