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The influence of substrate temperature on the properties of aluminum-doped zinc oxide thin films deposited by DC magnetron sputtering

Author
MOON, Yeon-Keon1 ; KIM, Se-Hyun1 ; PARK, Jong-Wan1
[1] Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea, Republic of
Source

Journal of materials science. Materials in electronics. 2006, Vol 17, Num 12, pp 973-977, 5 p ; ref : 13 ref

ISSN
0957-4522
Scientific domain
Electronics; Condensed state physics
Publisher
Springer, Norwell, MA
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Addition aluminium Caractéristique optique Conductivité électrique Couche mince Céramique Densité porteur charge Effet température Facteur transmission Magnétron Matériau conducteur Matériau dopé Matériau transparent Mobilité Hall Orientation cristalline Polycristal Pulvérisation cathodique Relation fabrication propriété Structure cristalline Structure wurtzite Zinc oxyde O Zn ZnO:Al
Keyword (en)
Aluminium addition Optical characteristic Electrical conductivity Thin film Ceramic materials Charge carrier density Temperature effect Transmittance Magnetron Conducting material Doped materials Transparent material Hall mobility Crystal orientation Polycrystal Cathodic sputtering Fabrication property relation Crystalline structure Wurtzite structure Zinc oxide
Keyword (es)
Adicion aluminio Característica óptica Conductividad eléctrica Capa fina Cerámica Concentración portador carga Efecto temperatura Factor transmisión Magnetrón Material conductor Material transparente Movilidad Hall Orientación cristalina Policristal Pulverización catódica Relación fabricación propiedad Estructura cristalina Estructura wurtzita Zinc óxido
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18207486

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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