Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique
- Author
- CHOI, Yong-Seok1 ; KIM, Seong-Jin1
[1] Photonics Device Research Laboratory, Itswell Co., Ltd, 9-4BL, Ochang Scientific Industrial Complex, Namchon-ri, Cheongwon-gun, Chungbuk 363-911, Korea, Republic of - Source
Solid-state electronics. 2006, Vol 50, Num 9-10, pp 1522-1528, 7 p ; ref : 11 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- GaN LED Sapphire Thermal dissipation Vertical-electrode
- Keyword (fr)
- Aluminium oxyde Composé binaire Courant intense Diode électroluminescente Dispositif optoélectronique Dissipation thermique Evaluation performance Gallium nitrure Procédé voie humide Puissance sortie Structure surface Al O Al2O3 Ga N GaN
- Keyword (en)
- Aluminium oxide Binary compound High strength current Light emitting diode Optoelectronic device Thermal dissipation Performance evaluation Gallium nitride Wet process Output power Surface structure
- Keyword (es)
- Aluminio óxido Compuesto binario Corriente intensa Diodo electroluminescente Dispositivo optoelectrónico Disipación térmica Evaluación prestación Galio nitruro Procedimiento vía húmeda Potencia salida Estructura superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18246595
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2006.07.020 
https://dx.doi.org/10.1016/j.sse.2006.07.020
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