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Concentration-dependent photoluminescence of Te-doped In0.14Ga0.86As0.13Sb0.87

Author
DIAZ-REYES, J1 ; MENDOZA-ALVAREZ, J. G2 ; GOMEZ-HERRERA, M. L3
[1] CIBA-IPN, Ex-Hacienda de San Juan Molino Km 1.5, Tepetitla, Tlaxcala 90700, Mexico
[2] Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, México, DF 07000, Mexico
[3] CICATA-IPN, Unidad Legaria, Avenida Legaria 694, Colonia Irrigación, México, DF 11500, Mexico
Source

Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 48, pp 10861-10869, 9 p ; ref : 14 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Addition tellure Composition chimique Densité porteur charge Dopage Epitaxie phase liquide Gallium antimoniure Gallium arséniure Impureté Indium antimoniure Indium arséniure Interaction coulombienne Interaction échange Ionisation impureté Photoluminescence Porteur libre Semiconducteur III-V Transition interbande 7855C
Keyword (en)
Tellurium additions Chemical composition Carrier density Doping LPE Gallium antimonides Gallium arsenides Impurities Indium antimonides Indium arsenides Coulomb interaction Exchange interactions Impurity ionization Photoluminescence Free carrier III-V semiconductors Interband transitions
Keyword (es)
Doping Interacción coulombiana Ionización impureza Portador libre
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18314191

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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