Reduction of ohmic contact resistivity on p-GaN using N2 plasma surface treatment at room temperature
- Author
- YINGWEN TANG1 ; DA YOU1 ; JINTONG XU1 ; XUE LI1 ; XIANGYANG LI1 ; HAIMEI GONG1
[1] State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China - Source
Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1597-1599, 3 p ; ref : 22 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique courant tension Contact ohmique Densité trou Gallium nitrure Hauteur barrière Niveau coeur Résistance contact Spectre photoélectron RX Traitement par plasma Traitement surface 7340C
- Keyword (en)
- IV characteristic Ohmic contacts Hole density Gallium nitrides Barrier height Core levels Contact resistance X-ray photoelectron spectra Plasma assisted processing Surface treatments
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40C Contact resistance, contact potential
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18314572
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/21/12/016 
https://dx.doi.org/10.1088/0268-1242/21/12/016
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