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Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates

Author
GUPTA, S1 ; GOPAL, V1 ; TANDON, R. P2
[1] Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi - 110054, India
[2] Department of Physics and Astrophysics, Delhi University, Delhi - 110007, India
Source

Journal of electronic materials. 2006, Vol 35, Num 11, pp 2056-2060, 5 p ; ref : 25 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
HgCdTe-on-Si infrared detectors very long wavelength infrared (VLWIR) zero-bias resistance-area product
Keyword (fr)
Actinide Couche mince Couche épitaxique Densité courant Densité dislocation Diode Détecteur IR Effet photovoltaïque Etude comparative Jonction p n Photodétecteur Réseau(arrangement) 8560 8560G
Keyword (en)
Actinide Thin film Epitaxial film Current density Dislocation density Diode Infrared detector Photovoltaic effect Comparative study p n junction Photodetector Array
Keyword (es)
Actínido Capa fina Capa epitáxica Densidad corriente Densidad dislocación Diodo Detector rayos infrarrojos Efecto fotovoltaico Estudio comparativo Unión p n Fotodetector Red
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18330451

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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