Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy
- Author
- WANG, J. B1 ; LI, Z. F2 ; CHEN, P. P2 ; LU, Wei2 ; YAO, T3
[1] Key Laboratory of Advanced Materials and Rheological Properties of Ministry of Education, Institute of Modern Physics, Xiangtan University, Xiangtan 411105, Hunan, China
[2] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China
[3] Institute for materials research, Tohoku University, Sendai 980-8577, Japan - Source
Acta materialia. 2007, Vol 55, Num 1, pp 183-187, 5 p ; ref : 25 ref
- ISSN
- 1359-6454
- Scientific domain
- Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- InN Lattice disorder Raman scattering
- Keyword (fr)
- Défaut cristallin Epitaxie Indium nitrure Plasma
- Keyword (en)
- Crystal defects Epitaxy Indium nitrides Plasma
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18331684
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.actamat.2006.07.031 
https://dx.doi.org/10.1016/j.actamat.2006.07.031
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