CMOS integration of dual work function phase-controlled Ni fully silicided gates (NMOS:NiSi, PMOS: Ni2Si, and Ni31Si12) on HfSiON
- Author
- KITTI, J. A1 ; LAUWERS, A1 ; VRANCKEN, C1 ; ABSIL, P1 ; BIESEMANS, S1 ; VELOSO, A1 ; HOFFMANN, T1 ; KUBICEK, S1 ; NIWA, M2 ; VAN DAL, M. J. H1 ; PAWLAK, M. A1 ; BRUS, S1 ; DEMEURISSE, C1
[1] Interuniversity Micro-Electronics Center (IMEC), 3001 Leuven, Belgium
[2] Philips Research Leuven, 3001 Leuven, Belgium - Source
IEEE electron device letters. 2006, Vol 27, Num 12, pp 966-968, 3 p ; ref : 10 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- CMOS HfSiON Ni2Si Ni31Si12 NiSi dual work function (WF) metal gates full silicidation fully silicided (FUSI) high-k dielectric
- Keyword (fr)
- Commande phase Diélectrique permittivité élevée Evaluation performance Extensibilité Largeur raie Polycristal Seuil tension Siliciuration Technologie MOS complémentaire Technologie NMOS Technologie PMOS Traitement thermique rapide Travail sortie
- Keyword (en)
- Phase control High k dielectric Performance evaluation Scalability Line width Polycrystal Voltage threshold Siliconizing Complementary MOS technology NMOS technology PMOS technology Rapid thermal processing Work function
- Keyword (es)
- Control fase Dieléctrico alta constante dieléctrica Evaluación prestación Estensibilidad Anchura raya espectral Policristal Umbral tensión Siliciuración Tecnología MOS complementario Tecnología NMOS Tecnología PMOS Función de trabajo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18340964
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2006.886414 
https://dx.doi.org/10.1109/LED.2006.886414
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