Reduction of current instabilities in silicon nanogaps
- Author
- BERG, Jonas1 ; LUNDGREN, Per1 ; ENOKSSON, Peter1
[1] Solid State Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 41296 Göteborg, Sweden - Source
Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2469-2474, 6 p ; ref : 30 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Native oxide Parasitic currents Percolation Selective etching Silicon nanogaps Soft breakdown
- Keyword (fr)
- Contrainte électrique Couche mince Endommagement Fabrication microélectronique Gravure sélective Instabilité courant Percolation Recuit
- Keyword (en)
- Electric stress Thin film Damaging Microelectronic fabrication Selective etching Current instability Percolation Annealing
- Keyword (es)
- Tensión eléctrica Capa fina Deterioración Fabricación microeléctrica Grabado selectivo Inestabilidad corriente Percolación Recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18349481
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2006.05.001 
https://dx.doi.org/10.1016/j.mee.2006.05.001
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