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The analysis of carbon bonding environment in HWCVD deposited a-SiC:H films by XPS and raman spectroscopy

Author
SWAIN, Bibhu P1 2
[1] Department of Metallurgical Engineering and Materials Science. Indian Institute of Technology. Bombay, Mumbai, MH, India
[2] Samtel Centre for Display Technologies. Indian Institute of Technology, Kanpur, U.P, India
Source

Surface & coatings technology. 2006, Vol 201, Num 3-4, pp 1589-1593, 5 p ; ref : 31 ref

CODEN
SCTEEJ
ISSN
0257-8972
Scientific domain
General chemistry, physical chemistry; Metallurgy, welding
Publisher
Elsevier, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Author keyword
FTIR HWCVD Raman spectroscopy UV-Vis spectroscopy XPS
Keyword (fr)
Spectrométrie Raman Traitement surface
Keyword (en)
Raman spectroscopy Surface treatments
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A90 Other topics in materials science

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18395259

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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