AlN on sapphire and on SiC : CL and Raman study
- Autor
- KORNITZER, K1 ; LIMMER, W1 ; THONKE, K1 ; SAUER, R1 ; EBLING, D. G2 ; STEINKE, L2 ; BENZ, K. W2
[1] Abteilung Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany
[2] Freiburger Materialforschungszentrum, Universität Freiburg, 79104 Freiburg, Germany - Titulo de la conferencia
- Molecular beam epitaxy 1998
- Nombre de la conferencia
- International Conference on Molecular Beam Epitaxy (10 ; Cannes 1998-08-31)
- Autor ( monografía)
- FAURIE, J.-P (Editor)1 ; ETIENNE, B (Editor)2 ; MASSIES, J (Editor)1
[1] CRHEA-CNRS, Valbonne, France
[2] L2M-CNET, Bagneux, France - Fuente
Journal of crystal growth. 1999, Vol 201202, pp 441-443 ; ref : 8 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave (fr)
- Aluminium nitrure Cathodoluminescence Composé binaire Couche épitaxique Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Hétéroépitaxie Matériau semiconducteur Microscopie force atomique Plasma STM Spectre Raman Ultravide Al N AlN Substrat SiC Composé minéral
- Palabra clave (in)
- Aluminium nitrides Cathodoluminescence Binary compounds Epitaxial layers Crystal growth from vapors Molecular beam epitaxy Experimental study Heteroepitaxy Semiconductor materials Atomic force microscopy Plasma STM Raman spectra Ultrahigh vacuum Inorganic compounds
- Palabra clave (es)
- Heteroepitaxia
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering / 001B70H30F Iii-v and ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H60 Other luminescence and radiative recombination / 001B70H60H Cathodoluminescence, ionoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 1839813
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(98)01371-2 
https://dx.doi.org/10.1016/S0022-0248(98)01371-2
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Acceso mediante arXiv
