Reduced phonon scattering in an asymmetric triple barrier resonant-tunneling diode at high magnetic fields
- Author
- STRUTZ, Thomas1 ; TAKAMASU, Tadashi2 ; SAKAKI, Hiroyuki3 ; MIURA, Noboru4
[1] RCAST, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8902, Japan
[2] National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan
[3] Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8902, Japan
[4] Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan - Source
Journal of the Physical Society of Japan. = Nihon Butsuri Gakkai ōji hōkoku. 2006, Vol 75, Num 11 ; 114702.1-114702.5 ; ref : 21 ref
- CODEN
- JUPSAU
- ISSN
- 0031-9015
- Scientific domain
- Crystallography; Mechanics acoustics; Condensed state physics; Theoretical physics
- Publisher
- Institute of Pure and Applied Physics, Tokyo
/
Physical Society of Japan, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Author keyword
- high magnetic field magnetophonon resonance phonon bottleneck resonant tunneling effect
- Keyword (fr)
- Caractéristique courant tension Champ intense Effet champ magnétique Effet magnétophonon Effet tunnel résonnant Electron chaud Injection porteur charge Interaction électron phonon Vitesse dérive 7340G Structure 3 barrières
- Keyword (en)
- IV characteristic High field Magnetic field effects Magnetophonon effects Resonant tunnelling Hot electrons Charge carrier injection Electron-phonon interactions Drift velocity
- Keyword (es)
- Inyección portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40G Tunneling
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18402888
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JPSJ.75.114702 
https://dx.doi.org/10.1143/JPSJ.75.114702
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