Computational fluid dynamic modeling of tin oxide deposition in an impinging chemical vapor deposition reactor
- Author
- MINGHENG LI1 ; SOPKO, John F1 ; MCCAMY, James W1
[1] Glass Technology Center, PPG Industries, P.O. Box 11472, Pittsburgh, PA 15238, United States - Source
Thin solid films. 2006, Vol 515, Num 4, pp 1400-1410, 11 p ; ref : 23 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- Chemical vapor deposition Computer simulation Diffusion Tin oxide
- Keyword (fr)
- Couche limite Diffusion(transport) Dépôt chimique phase vapeur Effet surface Etain oxyde Etude théorique Modélisation Mécanique fluide numérique Phase gazeuse Pression atmosphérique Précurseur Revêtement Réaction hétérogène Répartition spatiale Résultat expérimental Simulation ordinateur Verre Vitesse dépôt 8115G Substrat verre
- Keyword (en)
- Boundary layers Diffusion CVD Surface effect Tin oxides Theoretical study Modelling Computational fluid dynamics Gas phase Atmospheric pressure Precursor Coatings Heterogeneous reaction Spatial distribution Experimental result Computerized simulation Glass Deposition rate
- Keyword (es)
- Efecto superficie Reacción heterogénea Resultado experimental Velocidad deposición
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18439926
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.03.052 
https://dx.doi.org/10.1016/j.tsf.2006.03.052
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