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The versatility of hot-filament activated chemical vapor deposition

Author
SCHÄFER, Lothar1 ; HÖFER, Markus1 ; KRÖGER, Roland2
[1] Fraunhofer Institute for Surface Engineering and Thin Films, 38108 Braunschweig, Germany
[2] University of Bremen, Institute of Solid State Physics, Otto-Hahn-Allee, 28359 Bremen, Germany
Conference title
Proceedings of the 33rd International conference on metallurgical coatings and thin films, San Diego, California, May 1-5, 2006
Conference name
ICMCTF: International Conference on Metallurgical Coatings and Thin Films (33 ; San Diego, CA 2006-05-01)
Author (monograph)
STEWART, Alan (Editor)1 ; ERDEMIR, Ali (Editor)2 ; PATSCHEIDER, Jörg (Editor)3 ; PAULEAU, Yves (Editor)4
American Vacuum Society, Advanced Surface Engineering Division, United States (Organiser of meeting)
[1] Boeing Lasers and Electro-Optics, 8531 Fallbrook Ave., MC WA04, West Hills, CA 91304-3232, United States
[2] Argonne National Laboratory, Energy Technology Division, 9700 South Cass Avenue, Argonne, IL 60439, United States
[3] Lab. For Nanoscale Materials Sci., EMPA, Ueberlandstr. 129, 8600 Duebendorf, Switzerland
[4] National Polytechnic Institute of Grenoble, CNRS-LEMD, B.P.166, 25 Rue des Martyrs, 38042 Grenoble, France
Source

Thin solid films. 2006, Vol 515, Num 3, pp 1017-1024, 8 p ; ref : 23 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Author keyword
Carbide coatings Chemical vapor deposition Hot-filament activation Polycrystalline diamond Silicon coatings
Keyword (fr)
Addition arsenic Addition bore Adhérence Barrière diffusion Couche multimoléculaire Diamant polycristallin Diamant synthétique Dépôt chimique phase vapeur Effet contrainte Electrode carbone Electrode électrochimique Fil Hafnium Matériau composite Multicouche Métal transition Outil coupe Outil diamant Propriété mécanique Revêtement tribologique Rugosité Semiconducteur Silicium Topographie surface Tribologie 6860B 8105U 8115G 8245F Dépôt chimique phase vapeur filament chaud Si
Keyword (en)
Arsenic additions Boron additions Adhesion Diffusion barriers Multilayer Polycrystalline diamond Synthetic diamond CVD Stress effects Carbon electrode Electrochemical electrodes Wires Hafnium Composite materials Multilayers Transition elements Cutting tools Diamond tool Mechanical properties Tribological coatings Roughness Semiconductor materials Silicon Surface topography Tribology Hot filament chemical vapor deposition
Keyword (es)
Capa multimolecular Diamante policristal Diamante sintético Electrodo carbono Diamante
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60B Mechanical and acoustical properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry / 001C01H02 Electrodes: preparations and properties

Discipline
General chemistry and physical chemistry Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18460965

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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