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Reduction of leakage current of 4H-SiC pin diodes after UV light exposure

Author
WOLBORSKI, M1 ; BAKOWSKI, M2 ; SCHÖNER, A2
[1] Department of Microelectronics and Applied Physics, Royal Institute of Technology, PO Box Electrum 229, Kista 164 40, Sweden
[2] Acreo AB, Kista, Sweden
Source

Electronics Letters. 2007, Vol 43, Num 2, pp 129-130, 2 p ; ref : 11 ref

CODEN
ELLEAK
ISSN
0013-5194
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institution of Electrical Engineers, London
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Courant fuite Diode couche intrinsèque Dispositif optoélectronique Etude comparative Fabrication microélectronique Gravure ionique réactive Irradiation UV Nettoyage chimique Traitement surface
Keyword (en)
Leakage current p i n diode Optoelectronic device Comparative study Microelectronic fabrication Reactive ion etching Ultraviolet irradiation Chemical cleaning Surface treatment
Keyword (es)
Corriente escape Diodo capa intrínseca Dispositivo optoelectrónico Estudio comparativo Fabricación microeléctrica Grabado iónico reactivo Irradiación UV Limpieza química Tratamiento superficie
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18461684

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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