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Fabrication of 0.15-μm Γ-shaped gate In0.52Al0.48As /In0.6Ga0.4As metamorphic HEMTs using DUV lithography and tilt dry-etching technique

Author
LIEN, Yi-Chung1 ; CHEN, Szu-Hung1 ; YI CHANG, Edward1 ; LEE, Ching-Ting2 ; CHU, Li-Hsin1 ; CHANG, Chia-Yuan1
[1] Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan, Province of China
[2] Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Province of China
Source

IEEE electron device letters. 2007, Vol 28, Num 2, pp 93-95, 3 p ; ref : 12 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Deep ultraviolet (DUV) lithography metamorphic high-electron mobility transistors (MHEMTs) r-shaped gate tilt dry- etching technique
Keyword (fr)
Circuit MMIC Courant drain Diminution coût Fabrication microélectronique Gravure sèche Lithographie UV Lithographie faisceau électron Photolithographie Procédé voie sèche Rayonnement UV extrême Source courant Transconductance Transistor mobilité électron élevée Transistor métamorphique
Keyword (en)
MMIC Drain current Cost lowering Microelectronic fabrication Dry etching UV lithography Electron beam lithography Photolithography Dry process Vacuum ultraviolet radiation Current source Transconductance High electron mobility transistor Metamorphic transistor
Keyword (es)
Corriente dren Reducción costes Fabricación microeléctrica Grabado seco Litografía UV Litografía haz electrón Fotolitografía Procedimiento vía seca Radiación ultravioleta extrema Fuente corriente Transconductancia Transistor movibilidad elevada electrones Transistor metamórfico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02B Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18470368

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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