Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure
- Autor
- ROY, Arijit1 ; CHER MING TAN1
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639 798, Singapore - Fuente
Thin solid films. 2007, Vol 515, Num 7-8, pp 3867-3874, 8 p ; ref : 31 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier Science, Lausanne
- País de la publicación
- Switzerland
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Copper Driving forces Electromigration Finite element analysis
- Palabra clave (fr)
- Asymétrie Cavité dans réseau Cuivre Densité courant Distribution contrainte Défaut cristallin Electrodiffusion Méthode élément fini 6172Q
- Palabra clave (in)
- Asymmetry Voids Copper Current density Stress distribution Crystal defects Electrodiffusion Finite element method
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 18534810
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.10.124 
https://dx.doi.org/10.1016/j.tsf.2006.10.124
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