Comparison of on-the-fly, DC Id-Vg, and single-pulse methods for evaluating threshold voltage instability in high-κ nMOSFETs
- Author
- HEH, Dawei1 ; CHOI, Rino1 ; BERSUKER, Gennadi1
[1] SEMATECH, Austin, TX 78741, United States - Source
IEEE electron device letters. 2007, Vol 28, Num 3, pp 245-247, 3 p ; ref : 12 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- DC Id-Vg Vth relaxation fast transient charge on-the-fly single pulse
- Keyword (fr)
- Contrainte électrique Diélectrique permittivité élevée Durabilité Dépendance du temps Endommagement Etude comparative Fiabilité Haute tension Relaxation contrainte Seuil tension Technologie NMOS Transistor MOSFET
- Keyword (en)
- Electric stress High k dielectric Durability Time dependence Damaging Comparative study Reliability High voltage Stress relaxation Voltage threshold NMOS technology MOSFET
- Keyword (es)
- Tensión eléctrica Dieléctrico alta constante dieléctrica Durabilidad Dependencia del tiempo Deterioración Estudio comparativo Fiabilidad Alta tensión Relajación tensión Umbral tensión Tecnología NMOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18568878
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2007.891275 
https://dx.doi.org/10.1109/LED.2007.891275
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