MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
- Author
- XIAOLIANG WANG1 ; CUIMEI WANG1 ; GUOXIN HU1 ; HONGLING XIAO1 ; CEBAO FANG1 ; JUNXI WANG1 ; JUNXUE RAN1 ; JIANPING LI1 ; JINMIN LI1 ; ZHANGUO WANG1
[1] Institute of Semiconductors, Chinese Academy of Sciences, P. 0. Box 912, Beijing 100083, China - Conference title
- Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006
- Conference name
- ICMOVPE-XIII : International Conference on Metal Organic Vapor Phase Epitaxy (13 ; Phoenix Seagaia Resort, Miyazaki 2006-05-22)
- Author (monograph)
- ONABE, Kentaro (Editor)1 ; USUI, Akira (Editor)1 ; KOBAYASHI, Naoki (Editor)1
[1] Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan - Source
Journal of crystal growth. 2007, Vol 298, pp 791-793, 3 p ; ref : 9 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A3. MOCVD Al. 2DEG Al. Electron mobility B2. Semiconducting III-V materials B3. HEMT
- Keyword (fr)
- Alliage désordonné Aluminium nitrure Composé III-V Composé minéral Couche barrière Diffraction RX Gallium nitrure Gaz électron 2 dimensions Microscopie force atomique Microscopie électronique transmission Mobilité électron Méthode MOCVD Pastille électronique Résistivité couche Semiconducteur III-V Température ambiante Transistor mobilité électron élevée 7320 8105E 8115G 8530T AlGaN AlN GaN Substrat saphir
- Keyword (en)
- Disordered alloy Aluminium nitrides III-V compound Inorganic compounds Barrier layer XRD Gallium nitrides Two-dimensional electron gas Atomic force microscopy Transmission electron microscopy Electron mobility MOCVD Wafers Sheet resistivity III-V semiconductors Ambient temperature High electron mobility transistors
- Keyword (es)
- Aleación desordenada Compuesto III-V
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18578864
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2006.10.217 
https://dx.doi.org/10.1016/j.jcrysgro.2006.10.217
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