AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
- Author
- KAI CHENG1 2 ; LEYS, M1 ; DERLUYN, J1 ; DEGROOTE, S1 ; XIAO, D. P1 2 ; LORENZ, A1 2 ; BOEYKENS, S1 2 ; GERMAIN, M1 ; BORGHS, G1 3
[1] MCP/ART, IMEC, Kapeldreef 75, 3001 Leuven, Belgium
[2] Department of Electrical Engineering, Katholieke Universiteit Leuven, Belgium
[3] Department of Physics, Katholieke Universiteit Leuven, Belgium - Conference title
- Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006
- Conference name
- ICMOVPE-XIII : International Conference on Metal Organic Vapor Phase Epitaxy (13 ; Phoenix Seagaia Resort, Miyazaki 2006-05-22)
- Author (monograph)
- ONABE, Kentaro (Editor)1 ; USUI, Akira (Editor)1 ; KOBAYASHI, Naoki (Editor)1
[1] Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan - Source
Journal of crystal growth. 2007, Vol 298, pp 822-825, 4 p ; ref : 19 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 73.61.Ey; 73.20.At; 81.05.Ea; 81.15.Gh; 72.80.Ey; 85.30.Tv Al. Characterization; A3. Metal organic vapor phase epitaxy; Bl. Nitrides; B3. High electron mobility transistors
- Keyword (fr)
- Aluminium nitrure Composé III-V Composé minéral Couche épitaxique Courant drain Densité courant Densité électron Electrode commande Epitaxie phase vapeur Etat surface Gallium nitrure Gaz électron 2 dimensions Interface Mobilité électron Mécanisme croissance Méthode MOVPE Nitrure Pastille électronique Relaxation contrainte Résistivité couche Semiconducteur III-V Silicium nitrure Transistor mobilité électron élevée 7320 8105E 8115K 8530T AlGaN GaN Si3N4 Si Substrat Si
- Keyword (en)
- Aluminium nitrides III-V compound Inorganic compounds Epitaxial layers Drain current Current density Electron density Gates VPE Surface states Gallium nitrides Two-dimensional electron gas Interfaces Electron mobility Growth mechanism MOVPE method Nitrides Wafers Stress relaxation Sheet resistivity III-V semiconductors Silicon nitrides High electron mobility transistors
- Keyword (es)
- Compuesto III-V Corriente dren Mecanismo crecimiento Método MOVPE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18578872
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2006.10.185 
https://dx.doi.org/10.1016/j.jcrysgro.2006.10.185
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