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FMR linewidths of YIG films fabricated by ex situ post-annealing of amorphous films deposited by rf magnetron sputtering

Author
KANG, Young-Min1 ; ULYANOV, Alexander N1 ; YOO, Sang-Im1
[1] Department of Materials Science and Engineering, Seoul National University, San 56-1, Shilim-dong, Kwanak-ku, Seoul 151-744, Korea, Republic of
Source

Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 3, pp 763-767, 5 p ; ref : 12 ref

ISSN
1862-6300
Scientific domain
Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Atmosphère contrôlée Dépôt pulvérisation Fer oxyde Grenat fer yttrium Largeur raie Non stoechiométrie Pression partielle Pulvérisation cathodique Pulvérisation haute fréquence Radiofréquence Recuit Résonance ferromagnétique Yttrium oxyde 7650
Keyword (en)
Controlled atmospheres Sputter deposition Iron oxides YIG Line widths Nonstoichiometry Partial pressure Cathode sputtering Radiofrequency sputtering Radiofrequency Annealing Ferromagnetic resonance Yttrium oxides
Keyword (es)
Pulverización alta frecuencia Radiofrecuencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70F Magnetic resonances and relaxations in condensed matter, mössbauer effect / 001B70F50 Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18597988

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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