Red luminescence from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy
- Author
- LIJUN WANG1 ; RICHTER, E1 ; WEYERS, M1
[1] Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany - Source
Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 3, pp 846-849, 4 p ; ref : 10 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition carbone Addition oxygène Effet température Epitaxie phase vapeur Gallium nitrure Implantation ion Impureté Intensité excitation Paire accepteur donneur Photoluminescence 7855C
- Keyword (en)
- Carbon additions Oxygen additions Temperature effects VPE Gallium nitrides Ion implantation Impurities Excitation intensity Acceptor donor pair Photoluminescence
- Keyword (es)
- Intensidad excitación Par aceptor dador
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18597998
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200622409 
https://dx.doi.org/10.1002/pssa.200622409
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