Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing
- Author
- HONG, Hyun-Gi1 ; KIM, S.-S1 ; KIM, D.-Y1 ; LEE, Takhee1 ; K, Kyoung-Kook2 ; SONG, June-O2 ; CHO, J. H2 ; SEONG, Tae-Yeon3
[1] Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of
[2] Photonics program team, Samsung Advanced Institute of Technology, Suwon 440-600, Korea, Republic of
[3] Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea, Republic of - Source
Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 3, pp 881-886, 6 p ; ref : 14 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Courant fuite Diode électroluminescente Dopage Endommagement Formation motif Gallium nitrure Gravure sèche Performance Rayonnement UV Recuit thermique rapide Restauration(propriété) 8560J
- Keyword (en)
- Leakage current Light emitting diode Doping Damaging Patterning Gallium nitride Dry etching Performance Ultraviolet radiation Rapid thermal annealing Recovery(properties)
- Keyword (es)
- Corriente escape Diodo electroluminescente Doping Deterioración Formacíon motivo Galio nitruro Grabado seco Rendimiento Radiación ultravioleta Recocido térmico rápido Restauración(propiedad)
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18598003
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200622352 
https://dx.doi.org/10.1002/pssa.200622352
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