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Rapid crystallization of amorphous silicon utilizing a VHF plasma annealing at atmospheric pressure

Author
SHIRAI, H1 ; SAKURAI, Y1 ; YEO, M1 ; KOBAYASHI, T2 ; ISHIKAWA, T3
[1] Department of Physics and Functional Materials Science, The Graduate School of Science and Technology, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
[2] The Institute of Physics and Chemical Research, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
[3] Horiba Co. Ltd, Higashi Kanda, Chiyoda, Tokyo 101-0031, Japan
Source

EPJ. Applied physics (Print). 2007, Vol 37, Num 3, pp 315-322, 8 p ; ref : 25 ref

ISSN
1286-0042
Scientific domain
Physics
Publisher
EDP Sciences, Les Ulis / Springer, Berlin
Publication country
France
Document type
Article
Language
English
Keyword (fr)
Argon Azote Cellule solaire Couche mince Couplage inductif Cristallisation Ecoulement visqueux Fusion Haute fréquence Oxygène Pression atmosphérique Semiconducteur amorphe Silicium Transistor couche mince 5240F 5250Q
Keyword (en)
Argon Nitrogen Solar cells Thin films Inductive coupling Crystallization Viscous flow Melting High frequency Oxygen Atmospheric pressure Amorphous semiconductors Silicon Thin film transistors
Keyword (es)
Acoplamiento inductivo Alta frecuencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B40 Plasma interactions (nonlaser) / 001B50B40F Plasma interactions with antennas; plasma-filled waveguides

Pascal
001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B50 Plasma production and heating / 001B50B50Q Plasma heating by radiofrequency fields ; icr, icp, helicons

Discipline
Physics of gases, plasmas and electric discharges
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18606640

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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