Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition
- Author
- AKIYAMA, Yasunobu1 ; SHITANAKA, Katsuya1 ; MURAKAMI, Hiroshi1 ; SHIN, Young-Sik2 ; YOSHIDA, Michihide2 ; IMAISHI, Nobuyuki3
[1] Graduate School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
[2] Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
[3] Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan - Conference title
- Proceedings of the International Symposium on Dry Process (DPS 2005), Jeju, Korea, November 28-30, 2005
- Conference name
- DPS 2005: International Symposium on Dry Process (Jeju 2005-11-28)
- Author (monograph)
- FUJIWARA, Nobuo (Editor)1 ; STAMATE, Eugen (Editor)2 ; YEOM, Geun-Young (Editor)3 ; SHIRATANI, Masaharu (Editor)4 ; CHANG, Hong Yong (Editor)5 ; ECONOMOU, Demetre J (Editor)6 ; KUSANO, Eiji (Editor)7 ; CHANG, Jane P (Editor)8
Institute of Electrical Engineers of Japan, Japan (Organiser of meeting)
Japan Society of Applied Physics, Japan (Organiser of meeting)
[1] Renesas Technology Corporation, Japan
[2] Risø National Laboratory, Denmark
[3] Sungkyunkwan University, Korea, Republic of
[4] Kyushu University, Japan
[5] Korea Advanced Institute of Technology, Korea, Republic of
[6] University of Houston, United States
[7] Kanazawa Institute of Technology, Japan
[8] University of California at Los Angeles, United States - Source
Thin solid films. 2007, Vol 515, Num 12, pp 4975-4979, 5 p ; ref : 17 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Chemical vapor deposition Epitaxy Lithium niobate
- Keyword (fr)
- Condition opératoire Couche mince Couche épitaxique Croissance cristalline Diagramme phase Dépôt chimique phase vapeur Epitaxie Lithium composé Lithium niobate Matériau composite Mécanisme croissance Méthode MOCVD Solution solide 6855A 8115G LiNbO3 Substrat Si Substrat saphir
- Keyword (en)
- Operating conditions Thin films Epitaxial layers Crystal growth Phase diagrams CVD Epitaxy Lithium compounds Lithium niobates Composite materials Growth mechanism MOCVD Solid solutions
- Keyword (es)
- Condición operatoria Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18654579
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.10.034 
https://dx.doi.org/10.1016/j.tsf.2006.10.034
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