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Relativistic full-potential photoemission for GaAs(110)

Author
FLUCHTMANN, M1 ; DER KELLEN, S. B1 ; BRAUN, J1 ; BORSTEL, G1
[1] Department of Physics, University of Osnabrück, 49069 Osnabrück, Germany
Source

Surface science. 1999, Vol 432, Num 3, pp 291-296 ; ref : 46 ref

CODEN
SUSCAS
ISSN
0039-6028
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier Science, Amsterdam / Elsevier Science, Lausanne / Elsevier Science, New York, NY
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Calcul KKR Etat surface Etude théorique Gallium arséniure Matériau semiconducteur Photoémission Structure bande As Ga GaAs
Keyword (en)
KKR calculations Surface states Theoretical study Gallium arsenides Semiconductor materials Photoemission Band structure
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states / 001B70C20A Surface states, band structure, electron density of states

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I60 Photoemission and photoelectron spectra / 001B70I60B Clean metal, semiconductor, and insulator surfaces

Pacs
7320A Surface states, band structure, electron density of states

Pacs
7960B Clean metal, semiconductor, and insulator surfaces

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1866247

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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