RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz
- Author
- JESSEN, G. H1 ; GILLESPIE, J. K1 ; VIA, G. D1 ; CRESPO, A1 ; LANGLEY, D1 ; AUMER, M. E2 ; WARD, C. S2 ; HENRY, H. G2 ; THOMSON, D. B2 ; PARTLOW, D. P2
[1] Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, United States
[2] Northrop Grumman Electronic Systems, Baltimore, MD 21030, United States - Source
IEEE electron device letters. 2007, Vol 28, Num 5, pp 354-356, 3 p ; ref : 13 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- AlInN GaN InAIN high-electron mobility transistor (HEMT) power
- Keyword (fr)
- Evaluation performance Onde entretenue Transistor mobilité électron élevée
- Keyword (en)
- Performance evaluation Continuous wave High electron mobility transistor
- Keyword (es)
- Evaluación prestación Onda continua Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18710447
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2007.895417 
https://dx.doi.org/10.1109/LED.2007.895417
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