Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18716203

Export

Selection :

Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process

Author
GAN, K.-J1 ; TSAI, C.-S1 ; SUN, W.-L1
[1] Department of Electronic Engineering, Kun Shan University, Taiwan, Province of China
Source

Electronics Letters. 2007, Vol 43, Num 9, pp 516-517, 2 p ; ref : 6 ref

CODEN
ELLEAK
ISSN
0013-5194
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institution of Electrical Engineers, London
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Alliage semiconducteur Circuit MOS Conductivité différentielle négative Onduleur Structure MOS Transistor MOSFET Transistor bipolaire hétérojonction
Keyword (en)
Semiconductor alloys MOS circuit Negative differential conductivity Inverter MOS structure MOSFET Heterojunction bipolar transistors
Keyword (es)
Circuito MOS Conductividad diferencial negativa Ondulador Estructura MOS
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18716203

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web