Effect of GeF4 addition on the growth of hydrogenated microcrystalline silicon film by plasma-enhanced chemical vapor deposition
- Author
- SHIRAI, H1 ; FUKUDA, Y1 ; NAKAMURA, T1 ; AZUMA, K2
[1] Department of Functional Materials Science, Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Urawa, Saitama 338-8570, Japan
[2] Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totsuka, Yokohama 244-0817, Japan - Source
Thin solid films. 1999, Vol 350, Num 1-2, pp 38-43 ; ref : 14 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Additif Addition hydrogène Croissance cristalline en phase vapeur Ellipsométrie spectroscopique Ellipsométrie Etude expérimentale Film Fluorescence RX Germanium fluorure Impureté Matériau semiconducteur Microcristal Microscopie force atomique Méthode PECVD Rayon X Rugosité Silicium Spectrométrie photoélectron Surface μc-Si:H Non métal
- Keyword (en)
- Additives Hydrogen additions Crystal growth from vapors Spectroscopic ellipsometry Ellipsometry Experimental study Films X ray fluorescence Germanium fluorides Impurities Semiconductor materials Microcrystal Atomic force microscopy PECVD X radiation Roughness Silicon Photoelectron spectroscopy Surfaces Nonmetals
- Keyword (es)
- Elipsometría espectroscópica Fluorescencia RX Microcristal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1877039
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(99)00232-1 
https://dx.doi.org/10.1016/S0040-6090(99)00232-1
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