Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy
- Author
- IHN, Soo-Ghang1 ; SONG, Jong-In1 ; KIM, Young-Hun2 ; JEONG YONG LEE2 ; AHN, Il-Ho1
[1] Center for Distributed Sensor Networks, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of
[2] Korea Advanced Institute of Science and Technology, Daejon 305-701, Korea, Republic of - Source
IEEE transactions on nanotechnology. 2007, Vol 6, Num 3, pp 384-389, 6 p ; ref : 15 ref
- ISSN
- 1536-125X
- Scientific domain
- Electronics; Nanotechnologies, nanostructures, nanoobjects; Optics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Atomic force microscopy GaAs nanowire on Si molecular beam epitaxy photoluminescence
- Keyword (fr)
- Composé III-V Diffraction RX Diélectrique basse permittivité Epitaxie jet moléculaire Fabrication microélectronique Matériau dopé Mesure courant électrique Microscopie force atomique Microscopie électronique balayage Microscopie électronique transmission Nanofil Photoluminescence Silicium Température ambiante 0779 8107V Au Si
- Keyword (en)
- III-V compound XRD Low k dielectric Molecular beam epitaxy Microelectronic fabrication Doped materials Electric current measurement Atomic force microscopy Scanning electron microscopy Transmission electron microscopy Nanowires Photoluminescence Silicon Ambient temperature
- Keyword (es)
- Compuesto III-V Dieléctrico baja constante dieléctrica Fabricación microeléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Metrology Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18781796
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TNANO.2007.894362 
https://dx.doi.org/10.1109/TNANO.2007.894362
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