The influence of substrate morphology on the growth of thin silicon films : A GISAXS study
- Autor
- GRACIN, D1 ; BEMSTORFF, S2 ; DUBCEK, P1 ; GAJOVIC, A1 ; JURAIC, K1
[1] Rudjer Boskovic Institute, Bijenicka 54, 10000 Zagreb, Croatia
[2] Sincrotrone Trieste, SS 14 km 163.5, 34012 Basovizza, TS, Italy - Titulo de la conferencia
- Proceedings of the ninth international conference on surface X-Ray and neutron scattering, Taipei, Taiwan, July 16-20, 2006
- Nombre de la conferencia
- SXNS International Conference on Surface X-Ray and Neutron Scattering (9 ; Taipei 2006-07-16)
- Autor ( monografía)
- HSU, Chia-Hung (Editor)1 ; LIANG, Keng S (Editor)1 ; FELCHER, Gian P (Editor)2 ; NOH, Do Young (Editor)3 ; SINHA, Sunil K (Editor)4
[1] National Synchrotron Radiation Research Center, 101 Hisn-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan, Province of China
[2] Argonne National Laboratory, 9700 S. Cass. Avenue, Argonne, IL 60439, United States
[3] Gwangiu Institute Science and Technology, 1 Oryong-dong, Nugku, Gwangjiu 500-712, Korea, Republic of
[4] University of California, San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0319, United States - Fuente
Thin solid films. 2007, Vol 515, Num 14, pp 5615-5619, 5 p ; ref : 14 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier Science, Lausanne
- País de la publicación
- Switzerland
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- Amorphous silicon GISAXS Nano-crystalline silicon Raman
- Palabra clave (fr)
- Cavité dans réseau Condition opératoire Couche mince Dimension particule Défaut cristallin Fonction diélectrique Morphologie Mécanisme croissance Méthode PECVD Particule sphérique Polycristal Rugosité Réaction surface Silane Silicium Spectrométrie Raman 6172Q 6855A 8115G Si
- Palabra clave (in)
- Voids Operating conditions Thin films Particle size Crystal defects Dielectric function Morphology Growth mechanism PECVD Spherical particle Polycrystals Roughness Surface reactions Silanes Silicon Raman spectroscopy
- Palabra clave (es)
- Condición operatoria Mecanismo crecimiento Partícula esférica
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 18782671
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.12.012 
https://dx.doi.org/10.1016/j.tsf.2006.12.012
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