Structural characterization of thin amorphous Si films
- Autor
- GROZDANIC, D1 ; RAKVIN, B2 ; PIVAC, B2 ; DUBCEK, P2 ; RADIC, N2 ; BERNSTORFF, S3
[1] Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia
[2] R. Boskovic Institute, P.O. Box 180, 10000 Zagreb, Croatia
[3] Sincrotrone Trieste, SS 14, km 163.5, Basovizza (TS), Italy - Titulo de la conferencia
- Proceedings of the ninth international conference on surface X-Ray and neutron scattering, Taipei, Taiwan, July 16-20, 2006
- Nombre de la conferencia
- SXNS International Conference on Surface X-Ray and Neutron Scattering (9 ; Taipei 2006-07-16)
- Autor ( monografía)
- HSU, Chia-Hung (Editor)1 ; LIANG, Keng S (Editor)1 ; FELCHER, Gian P (Editor)2 ; NOH, Do Young (Editor)3 ; SINHA, Sunil K (Editor)4
[1] National Synchrotron Radiation Research Center, 101 Hisn-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan, Province of China
[2] Argonne National Laboratory, 9700 S. Cass. Avenue, Argonne, IL 60439, United States
[3] Gwangiu Institute Science and Technology, 1 Oryong-dong, Nugku, Gwangjiu 500-712, Korea, Republic of
[4] University of California, San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0319, United States - Fuente
Thin solid films. 2007, Vol 515, Num 14, pp 5620-5623, 4 p ; ref : 11 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier Science, Lausanne
- País de la publicación
- Switzerland
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- Amorphous silicon Electron paramagnetic resonance Nanostructures Small angle X-ray scattering
- Palabra clave (fr)
- Analyse structurale Cavité dans réseau Couche mince Diffusion RX centrale Défaut cristallin Dépôt physique phase vapeur Dépôt pulvérisation Liaison disponible Monocristal Nanostructure Pulvérisation cathodique Recuit thermique Résonance paramagnétique éléctronique Silicium Structure cristalline Température ambiante Transformation phase 6172Q 6855N 8107 8115C Couche mince amorphe Si Substrat Si
- Palabra clave (in)
- Structural analysis Voids Thin films Small angle X ray scattering Crystal defects Physical vapor deposition Sputter deposition Dangling bonds Monocrystals Nanostructures Cathode sputtering Thermal annealing Electron paramagnetic resonance Silicon Crystal structure Ambient temperature Phase transformations Amorphous thin film
- Palabra clave (es)
- Análisis estructural Difusión rayo X central Recocido térmico
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55N Composition and phase identification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 18782672
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.12.013 
https://dx.doi.org/10.1016/j.tsf.2006.12.013
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