Radiation-enhanced diffusion of palladium for a local lifetime control in power devices
- Author
- VOBECKY, Jan1 ; HAZDRA, Pavel1
[1] Department of Microelectronics, Czech Technical University, Prague 166 27, Czech Republic - Source
I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 6, pp 1521-1526, 6 p ; ref : 28 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Dynamic avalanche (DA) helium (He) irradiation lifetime control palladium (Pd) diffusion power diode silicon
- Keyword (fr)
- Amplificateur optique semiconducteur Anode Caractéristique thermique Champ électrique Commande puissance Couche superficielle Courant fuite Diffusion superficielle Diode couche intrinsèque Diode puissance Dispositif puissance Disruption électrique Dopage Durabilité Fiabilité Profil dopage Recuit Résistance étalement Tension amorçage Tension circuit ouvert
- Keyword (en)
- Semiconductor optical amplifiers Anode Thermal characteristic Electric field Power control Surface layer Leakage current Surface diffusion p i n diode Power diode Power device Electric breakdown Doping Durability Reliability Doping profile Annealing Spreading resistance Breakdown voltage Open circuit voltage
- Keyword (es)
- Anodo Característica térmica Campo eléctrico Control potencia Capa superficial Corriente escape Difusión superficial Diodo capa intrínseca Diodo potencia Dispositivo potencia Disrupción eléctrica Doping Durabilidad Fiabilidad Perfil doping Recocido Resistencia ensanchamiento Voltaje perforación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F05 Other multijunction devices. Power transistors. Thyristors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies
- Discipline
- Electrical engineering. Electroenergetics Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18798289
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2007.896384 
https://dx.doi.org/10.1109/TED.2007.896384
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