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Computationally efficient method for scattering device simulation in nanoscale MOSFETs

Author
IWATA, Hideyuki1 ; MATSUDA, Toshihiro1 ; OHZONE, Takashi2
[1] Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
[2] Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan
Source

Solid-state electronics. 2007, Vol 51, Num 5, pp 708-713, 6 p ; ref : 19 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
MOSFET Nanoscale Non-equilibrium green function Quantum-mechanical effect Scattering
Keyword (fr)
Autocohérence Canal n Couche appauvrissement Effet quantique Fonction Green Fonction onde Nanoélectronique Niveau Fermi Régime hors équilibre Silicium Sous bande Technologie silicium sur isolant Transistor MOSFET Transistor grille double Si
Keyword (en)
Self consistency n channel Depletion layer Quantum effect Green function Wave function Nanoelectronics Fermi level Non equilibrium conditions Silicon Subband Silicon on insulator technology MOSFET Dual gate transistor
Keyword (es)
Autocoherencia Canal n Capa empobrecimiento Efecto cuántico Función Green Función onda Nanoelectrónica Nivel Fermi Régimen fuera equilibrio Silicio Subbanda Tecnología silicio sobre aislante Transistor de compuerta doble
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18802895

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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