Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses
- Author
- YONGXUN LIU1 ; MATSUKAWA, Takashi1 ; ENDO, Kazuhiko1 ; MASAHARA, Meishoku1 ; O'UCHI, Shin-Ichi1 ; ISHII, Kenichi1 ; YAMAUCHI, Hiromi1 ; TSUKADA, Junichi1 ; ISHIKAWA, Yuki1 ; SUZUKI, Eiichi1
[1] National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8568, Japan - Source
IEEE electron device letters. 2007, Vol 28, Num 6, pp 517-519, 3 p ; ref : 9 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Asymmetric gate-oxide thicknesses FinFET TiN gate cointegration double-gate MOSFET independent-gate FinFET threshold-voltage control
- Keyword (fr)
- Circuit VLSI Circuit intégré Circuit logique Commande tension Contrôle épaisseur Electronique faible puissance Fabrication microélectronique Grille transistor Haute performance Logique seuil Oxyde grille Porte logique Pulvérisation réactive Résist Seuil tension Technologie autoalignée Transistor MOSFET Transistor grille double Tension de commande Tension grille
- Keyword (en)
- VLSI circuit Integrated circuit Logic circuit Voltage control Thickness control Low-power electronics Microelectronic fabrication Transistor gate High performance Threshold logic Gate oxide Logic gate Reactive sputtering Resist Voltage threshold Self aligned technology MOSFET Dual gate transistor Actuation voltage Gate voltage
- Keyword (es)
- Circuito VLSI Circuito integrado Circuito lógico Control tensión Fabricación microeléctrica Rejilla transistor Alto rendimiento Lógica umbral Oxido rejilla Puerta lógica Pulverización reactiva Resistencia Umbral tensión Tecnología rejilla autoalineada Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A6 Digital circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18811571
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2007.896898 
https://dx.doi.org/10.1109/LED.2007.896898
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