Dependence of conduction type of ZnO films prepared by sputtering a Zn3As2/ZnO target on substrate temperature and thermal treatment
- Author
- FAN, J. C1 ; XIE, Z2 ; WAN, Q3 ; WANG, Y. G3
[1] College of Materials Science and Engineering, Hunan University, Changsha 410082, China
[2] College of Physics and Microelectronical Science, Hunan University, Changsha 410082, China
[3] Micro-Nano Technologies Research Center, Hunan University, Changsha 410082, China - Source
Journal of crystal growth. 2007, Vol 304, Num 2, pp 295-298, 4 p ; ref : 16 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 72.80.Ey Al. Arsenic dopant; Al. Thermal treatment; A3. Zn3As2/ZnO target; Bl. p-Type ZnO films
- Keyword (fr)
- Addition arsenic Arsenic Composé minéral Conductivité type p Conductivité électrique Couche mince Diffraction RX Dépôt physique phase vapeur Dépôt pulvérisation Effet Hall Métal transition composé Orientation cristalline Pulvérisation cathodique Pulvérisation haute fréquence Recuit Semiconducteur II-VI Spectrométrie dispersive Température ambiante Traitement thermique Zinc oxyde 6110N 7361 8105D 8115C Substrat verre ZnO
- Keyword (en)
- Arsenic additions Arsenic Inorganic compounds P type conductivity Electrical conductivity Thin films XRD Physical vapor deposition Sputter deposition Hall effect Transition element compounds Crystal orientation Cathode sputtering Radiofrequency sputtering Annealing II-VI semiconductors Dispersive spectrometry Ambient temperature Heat treatments Zinc oxides
- Keyword (es)
- Conductividad tipo p Pulverización alta frecuencia Espectrometría dispersiva
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A10 X-ray diffraction and scattering / 001B60A10N Single-crystal and powder diffraction
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18829635
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2007.02.027 
https://dx.doi.org/10.1016/j.jcrysgro.2007.02.027
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