Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
- Author
- SCHLOTTER, P1 ; BAUR, J1 ; HIELSCHER, C1 ; KUNZER, M1 ; OBLOH, H1 ; SCHMIDT, R1 ; SCHNEIDER, J1
[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany - Conference title
- Papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials, June 16-19, 1998, Strasbourg, France
- Conference name
- European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials (Strasbourg 1998-06-16)
- Author (monograph)
- HANGLEITER, Andreas (Editor)1 ; DUBOZ, Jean-Yves (Editor)2 ; KISHINO, Katsumi (Editor)3 ; PONCE, Fernando (Editor)4
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
[1] University of Stuttgart, Germany
[2] Thomson CSF, France
[3] Sophia University, Japan
[4] Xerox PARC, United States - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 59, Num 1-3, pp 390-394 ; ref : 5 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Nitrure Caractéristique courant tension Composé III-V Composé binaire Composé organométallique Composé ternaire Conversion fréquence Cérium Diode MESA Diode électroluminescente Déplacement Stokes Dépôt chimique phase vapeur Electroluminescence Encapsulation plastique Epoxyde résine Gallium Nitrure Gravure faisceau ionique Hétérojonction double Indium Nitrure Luminescence Lumière blanche Lumière bleue Métallisation Photoluminescence Pérylène Spectre luminescence Spectre émission Al Ga N AlGaN Ga In N Ga N GaN InGaN lumière violette
- Keyword (en)
- Aluminium Nitrides Voltage current curve III-V compound Binary compound Organometallic compound Ternary compound Frequency conversion Cerium MESA diode Light emitting diode Stokes shift Chemical vapor deposition Electroluminescence Plastic packaging Epoxy resin Gallium Nitrides Ion beam etching Double heterojunction Indium Nitrides Luminescence White light Blue light Metallizing Photoluminescence Perylene Luminescence spectrum Emission spectrum
- Keyword (es)
- Aluminio Nitruro Característica corriente tensión Compuesto III-V Compuesto binario Compuesto organometálico Compuesto ternario Conversión frecuencia Cerio Diodo MESA Diodo electroluminescente Desplazamiento Stokes Depósito químico fase vapor Electroluminiscencia Encapsulación plástica Epóxido resina Galio Nitruro Grabado haz iónico Heterounión doble Indio Nitruro Luminiscencia Luz blanca Luz azul Metalización Fotoluminiscencia Perileno Espectro luminiscencia Espectro emisión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1887364
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0921-5107(98)00352-3 
https://dx.doi.org/10.1016/S0921-5107(98)00352-3
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(98)00352-3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"390\";s:8:\"\u0000*\u0000epage\";s:3:\"394\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"SCHLOTTER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"BAUR, J\";i:1;s:12:\"HIELSCHER, C\";i:2;s:9:\"KUNZER, M\";i:3;s:8:\"OBLOH, H\";i:4;s:10:\"SCHMIDT, R\";i:5;s:12:\"SCHNEIDER, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:176:\"Papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials, June 16-19, 1998, Strasbourg, France\";s:8:\"\u0000*\u0000title\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(98)00352-3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"390\";s:8:\"\u0000*\u0000epage\";s:3:\"394\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"SCHLOTTER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"BAUR, J\";i:1;s:12:\"HIELSCHER, C\";i:2;s:9:\"KUNZER, M\";i:3;s:8:\"OBLOH, H\";i:4;s:10:\"SCHMIDT, R\";i:5;s:12:\"SCHNEIDER, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:176:\"Papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials, June 16-19, 1998, Strasbourg, France\";s:8:\"\u0000*\u0000title\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(98)00352-3\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(98)00352-3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"390\";s:8:\"\u0000*\u0000epage\";s:3:\"394\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"SCHLOTTER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"BAUR, J\";i:1;s:12:\"HIELSCHER, C\";i:2;s:9:\"KUNZER, M\";i:3;s:8:\"OBLOH, H\";i:4;s:10:\"SCHMIDT, R\";i:5;s:12:\"SCHNEIDER, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:176:\"Papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials, June 16-19, 1998, Strasbourg, France\";s:8:\"\u0000*\u0000title\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(98)00352-3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"390\";s:8:\"\u0000*\u0000epage\";s:3:\"394\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"SCHLOTTER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"BAUR, J\";i:1;s:12:\"HIELSCHER, C\";i:2;s:9:\"KUNZER, M\";i:3;s:8:\"OBLOH, H\";i:4;s:10:\"SCHMIDT, R\";i:5;s:12:\"SCHNEIDER, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:176:\"Papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials, June 16-19, 1998, Strasbourg, France\";s:8:\"\u0000*\u0000title\";s:133:\"Fabrication and characterization of GaN\/InGaN\/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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