Ferromagnetism in transition-metal doped ZnO
- Author
- PEARTON, S. J1 ; NORTON, D. P1 ; IVILL, M. P1 ; HEBARD, A. F2 ; ZAVADA, J. M3 ; CHEN, W. M4 ; BUYANOVA, I. A4
[1] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States
[2] Department of Physics, University of Florida, Gainesville, FL 32611, United States
[3] Army Research Office, Research Triangle Park, NC 27709, United States
[4] Department of Physics and Measurement Technology, Linköping University, 58183, Linkoping, Sweden - Issue title
- Group III Nitrides, SiC and ZnO
- Author (monograph)
- STAHLBUSH, Robert (Editor)1 ; JENA, Debdeep (Editor)2 ; PHILLIPS, Jamie (Editor)3
[1] Naval Research Laboratory, Washington, DC, United States
[2] University of Notre Dame, South Bend, IN, United States
[3] University of Michigan, Ann Arbor, MI, United States - Source
Journal of electronic materials. 2007, Vol 36, Num 4, pp 462-471, 10 p ; ref : 102 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Zinc oxide spintronics transition metals (TMs)
- Keyword (fr)
- Addition indium Addition métal transition Article synthèse Champ intense Dopage Effet champ magnétique Electronique spin Ferromagnétisme Haute température Matériau ferromagnétique Métal transition Point Curie Polarisation optique Polarisation spin Précipité Résultat expérimental Thulium sulfure Transistor effet champ Zinc oxyde 7225 7550 8530T 8575 S Tm TmS ZnO
- Keyword (en)
- Indium additions Transition element additions Reviews High field Doping Magnetic field effects Spintronics Ferromagnetism High temperature Ferromagnetic materials Transition elements Curie point Optical polarization Spin polarization Precipitates Experimental result Thulium sulfides Field effect transistors Zinc oxides
- Keyword (es)
- Doping Electrónica de espin Alta temperatura Polarización spin Resultado experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B25 Spin polarized transport
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E50 Studies of specific magnetic materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F12 Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18876856
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1007/s11664-006-0034-z 
https://dx.doi.org/10.1007/s11664-006-0034-z
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-006-0034-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"462\";s:8:\"\u0000*\u0000epage\";s:3:\"471\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"PEARTON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:12:\"NORTON, D. P\";i:1;s:11:\"IVILL, M. P\";i:2;s:12:\"HEBARD, A. F\";i:3;s:12:\"ZAVADA, J. M\";i:4;s:10:\"CHEN, W. M\";i:5;s:14:\"BUYANOVA, I. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:31:\"Group III Nitrides, SiC and ZnO\";s:8:\"\u0000*\u0000title\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-006-0034-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"462\";s:8:\"\u0000*\u0000epage\";s:3:\"471\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"PEARTON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:12:\"NORTON, D. P\";i:1;s:11:\"IVILL, M. P\";i:2;s:12:\"HEBARD, A. F\";i:3;s:12:\"ZAVADA, J. M\";i:4;s:10:\"CHEN, W. M\";i:5;s:14:\"BUYANOVA, I. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:31:\"Group III Nitrides, SiC and ZnO\";s:8:\"\u0000*\u0000title\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-006-0034-z\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-006-0034-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"462\";s:8:\"\u0000*\u0000epage\";s:3:\"471\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"PEARTON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:12:\"NORTON, D. P\";i:1;s:11:\"IVILL, M. P\";i:2;s:12:\"HEBARD, A. F\";i:3;s:12:\"ZAVADA, J. M\";i:4;s:10:\"CHEN, W. M\";i:5;s:14:\"BUYANOVA, I. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:31:\"Group III Nitrides, SiC and ZnO\";s:8:\"\u0000*\u0000title\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-006-0034-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"462\";s:8:\"\u0000*\u0000epage\";s:3:\"471\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"PEARTON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:12:\"NORTON, D. P\";i:1;s:11:\"IVILL, M. P\";i:2;s:12:\"HEBARD, A. F\";i:3;s:12:\"ZAVADA, J. M\";i:4;s:10:\"CHEN, W. M\";i:5;s:14:\"BUYANOVA, I. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:31:\"Group III Nitrides, SiC and ZnO\";s:8:\"\u0000*\u0000title\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-006-0034-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"462\";s:8:\"\u0000*\u0000epage\";s:3:\"471\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"PEARTON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:12:\"NORTON, D. P\";i:1;s:11:\"IVILL, M. P\";i:2;s:12:\"HEBARD, A. F\";i:3;s:12:\"ZAVADA, J. M\";i:4;s:10:\"CHEN, W. M\";i:5;s:14:\"BUYANOVA, I. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:31:\"Group III Nitrides, SiC and ZnO\";s:8:\"\u0000*\u0000title\";s:44:\"Ferromagnetism in transition-metal doped ZnO\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
