Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors
- Author
- CHIU, C. H1 ; KUO, H. C1 ; LEE, C. E1 ; LIN, C. H2 ; CHENG, P. C1 ; HUANG, H. W1 ; LU, T. C1 ; WANG, S. C1 ; LEUNG, K. M2
[1] Department of Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, Province of China
[2] Department of Computer and Information Science, Polytechnic University, Six Metrotech Center, Brooklyn, NY 11201, United States - Source
Semiconductor science and technology. 2007, Vol 22, Num 7, pp 831-835, 5 p ; ref : 17 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bande interdite photonique Composé binaire Composé ternaire Couche mince Diagramme rayonnement Diode injection Diode électroluminescente Dispositif couche mince Dispositif optoélectronique Décollement épitaxique Facteur réflexion Gallium nitrure Indium nitrure Puissance sortie Rendement quantique Réflecteur Silicium oxyde Structure périodique Surface rugueuse Titane oxyde Ga In N Ga N GaN InGaN O Si O Ti SiO2 TiO2
- Keyword (en)
- Photonic band gap Binary compound Ternary compound Thin film Radiation pattern Injection diode Light emitting diode Thin film device Optoelectronic device Lift off Reflectance Gallium nitride Indium nitride Output power Quantum yield Reflector Silicon oxides Periodic structure Rough surface Titanium oxide
- Keyword (es)
- Compuesto binario Compuesto ternario Capa fina Diagrama radiación Diodo inyección Diodo electroluminescente Dispositivo capa delgada Dispositivo optoelectrónico Desprendimiento epitáxico Coeficiente reflexión Galio nitruro Indio nitruro Potencia salida Rendimiento quántico Reflector Estructura periódica Superficie rugosa Titanio óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18898985
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/22/7/029 
https://dx.doi.org/10.1088/0268-1242/22/7/029
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